Sökning: "Electro-thermal simulation"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden Electro-thermal simulation.

  1. 1. Electrothermal Simulation in a Concurrent Waveform Relaxation Based Circuit Simulator

    Detta är en avhandling från Department of Applied Electronics, Lund University

    Författare :Magnus Wiklund; Lunds universitet.; Lund University.; [1998]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Circuit synthesis; Bond graphs; Nullor; Circuit theory; Analog simulation; Circuit simulation; Multiprocessor computer; CONCISE; Parallel computation; Waveform relaxation; Thermal models; Transistor models; Electro-thermal simulation; Electro-thermal modeling; Translinear circuits; Electronics; Elektronik; Electrical engineering; Elektroteknik;

    Sammanfattning : The main purpose of this work is to study methods to simulate electro-thermal effects in integrated circuits using CONCISE a waveform relaxation based circuit simulator. WR is a method that is suitable to run on a multi-computer with state of the art computing power. Especially CMOS VLSI circuits have been simulated successfully with WR. LÄS MER

  2. 2. Electro-thermal simulations and measurements of silicon carbide power transistors

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Wei Liu; KTH.; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; silicon carbide; power device; metal semiconductor field-effect transistor; bipolar junction transistor; electro-thermal simulation; Elektronik; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER

  3. 3. Modelling of Terahertz Planar Schottky Diodes

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Aik-Yean Tang; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; S-parameter extraction; Electro-thermal; Schottky diodes; Skin effect; Electromagnetic; Frequency multipliers; High-power frequency multiplier; Current crowding; Proximity effect; Submillimetre wave generation and detection; Geometric modelling; Gallium Arsenide;

    Sammanfattning : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. LÄS MER

  4. 4. Thermal Modelling of Power Modules in a Hybrid Vehicle Application

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Jonas Ottosson; Lunds universitet.; Lund University.; [2013]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power Module; Thermal Modelling; Electro-Thermal Simulations; Reliability; Cooling requirements;

    Sammanfattning : Hybrid electric and full electric vehicles have attracted growing attention during the last decade. This is a consequence of several factors, such as growing environmental concerns, increasing oil prices and a strive for oil independency. LÄS MER

  5. 5. Simulation and Optimization of SiC Field Effect Transistors

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Kent Bertilsson; Mittuniversitetet.; KTH.; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TECHNOLOGY Electrical engineering; electronics and photonics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik; SiC; MOSFET; MESFET; Thermal Effects; Device modeling; Optimization; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik; Electronics; Device simulation; RF; power; Elektronik;

    Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER