Sökning: "Electro-thermal modeling"

Hittade 3 avhandlingar innehållade orden Electro-thermal modeling.

  1. 1. Electrothermal Simulation in a Concurrent Waveform Relaxation Based Circuit Simulator

    Författare :Magnus Wiklund; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Circuit synthesis; Bond graphs; Nullor; Circuit theory; Analog simulation; Circuit simulation; Multiprocessor computer; CONCISE; Parallel computation; Waveform relaxation; Thermal models; Transistor models; Electro-thermal simulation; Electro-thermal modeling; Translinear circuits; Electronics; Elektronik; Electrical engineering; Elektroteknik;

    Sammanfattning : The main purpose of this work is to study methods to simulate electro-thermal effects in integrated circuits using CONCISE a waveform relaxation based circuit simulator. WR is a method that is suitable to run on a multi-computer with state of the art computing power. Especially CMOS VLSI circuits have been simulated successfully with WR. LÄS MER

  3. 2. On Modeling and Optimal Control of Modular Batteries: Thermal and State-of-Charge Balancing

    Författare :Faisal Altaf; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; convex optimization; converters; electrified vehicles.; model predictive control; thermal balancing; SOC balancing; battery control; Modular batteries;

    Sammanfattning : There has in recent years been an increasing interest in battery-powered electrified vehicles (xEVs) to reduce carbon footprint of transportation and the dependence on fossil fuels. Since the battery pack of xEVs is one of the most expensive but a key component in the powertrain, the battery lifetime is an important factor for the success of xEVs. LÄS MER

  4. 3. On Reliability of SiC Power Devices in Power Electronics

    Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER