Sökning: "Electro-Thermal Simulations"
Hittade 5 avhandlingar innehållade orden Electro-Thermal Simulations.
1. Electro-thermal simulations and measurements of silicon carbide power transistors
Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER
2. Thermal Modelling of Power Modules in a Hybrid Vehicle Application
Sammanfattning : Hybrid electric and full electric vehicles have attracted growing attention during the last decade. This is a consequence of several factors, such as growing environmental concerns, increasing oil prices and a strive for oil independency. LÄS MER
3. Simulation and Optimization of SiC Field Effect Transistors
Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER
4. On Modeling and Optimal Control of Modular Batteries: Thermal and State-of-Charge Balancing
Sammanfattning : There has in recent years been an increasing interest in battery-powered electrified vehicles (xEVs) to reduce carbon footprint of transportation and the dependence on fossil fuels. Since the battery pack of xEVs is one of the most expensive but a key component in the powertrain, the battery lifetime is an important factor for the success of xEVs. LÄS MER
5. On Reliability of SiC Power Devices in Power Electronics
Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER
