Sökning: "Electro-Thermal Simulations"
Hittade 5 avhandlingar innehållade orden Electro-Thermal Simulations.
Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER
Sammanfattning : Hybrid electric and full electric vehicles have attracted growing attention during the last decade. This is a consequence of several factors, such as growing environmental concerns, increasing oil prices and a strive for oil independency. LÄS MER
Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER
Sammanfattning : There has in recent years been an increasing interest in battery-powered electrified vehicles (xEVs) to reduce carbon footprint of transportation and the dependence on fossil fuels. Since the battery pack of xEVs is one of the most expensive but a key component in the powertrain, the battery lifetime is an important factor for the success of xEVs. LÄS MER
Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER