Sökning: "Deep level defects"
Visar resultat 1 - 5 av 30 avhandlingar innehållade orden Deep level defects.
1. Optical Characterization of Deep Level Defects in SiC
Sammanfattning : Silicon Carbide (SiC) has long been considered a promising semiconductor material for high power devices, and has also recently found to be one of the emergent materials for quantum computing. Important for these applications are both the quality and purity of the crystal. LÄS MER
2. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide
Sammanfattning : .... LÄS MER
3. Deep levels in SiC
Sammanfattning : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. LÄS MER
4. Color Centers in Semiconductors for Quantum Applications : A High-Throughput Search of Point Defects in SiC
Sammanfattning : Point defects in semiconductors have been and will continue to be relevant for applications. Shallow defects realize transistors, which power the modern age of information, and in the not-too-distant future, deep-level defects could provide the foundation for a revolution in quantum information processing. LÄS MER
5. Carrier Lifetime Relevant Deep Levels in SiC
Sammanfattning : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. LÄS MER
