Sökning: "Darlington transistors"
Hittade 5 avhandlingar innehållade orden Darlington transistors.
1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors
Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER
2. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits
Sammanfattning : The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. LÄS MER
3. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors
Sammanfattning : The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. LÄS MER
4. Silicon Carbide High Temperature Photodetectors and Image Sensor
Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER
5. Integrated Oscillators in InGaP/GaAs HBT Technology
Sammanfattning : The thesis presents two major concerns in the design of low phase-noise MMIC VCOs; the active device model and the simulation tool. Besides, several design techniques to improve VCO tuning range and phase noise are investigated. The VCOs designed in this work are implemented in InGaP/GaAs HBT technology. LÄS MER