Sökning: "DISLOCATIONS"

Visar resultat 21 - 25 av 141 avhandlingar innehållade ordet DISLOCATIONS.

  1. 21. Multiscale modelling of radiation-enhanced diffusion phenomena in metals

    Författare :Zhongwen Chang; Olsson Pär; Alexandre Legris; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Teknisk materialvetenskap; Materials Science and Engineering;

    Sammanfattning : A multiscale modelling framework and an experiment campaign are used to study void swelling and Cu precipitation under irradiation. Several aspects regarding defect and solute diffusion under irradiation have been studied in this thesis. LÄS MER

  3. 22. Modeling defect structure evolution in spent nuclear fuel container materials

    Författare :Arash Hosseinzadeh Delandar; Pavel Korzhavyi; Rolf Sandström; Konstantin Khromov; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cast iron insert; First principles calculations; Point defects; Effective interaction energy; Late blooming phase; Dislocation dynamics; High strain rate deformation; Single-crystal copper; Copper canister; Creep; Glide; Teknisk materialvetenskap; Materials Science and Engineering;

    Sammanfattning : Materials intended for disposal of spent nuclear fuel require a particular combination of physical and chemical properties. The driving forces and mechanisms underlying the material’s behavior must be scientifically understood in order to enable modeling at the relevant time- and length-scales. LÄS MER

  4. 23. High-quality InP on Si and concepts for monolithic photonic integration

    Författare :Carl Junesand; Sebastian Lourdudoss; Wolfgang Stolz; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : As the age of Moore’s law is drawing to a close, continuing increase in computing performance is becoming increasingly hard‐earned, while demand for bandwidth is insatiable. One way of dealing with this challenge is the integration of active photonic material with Si, allowing high‐speed optical inter‐ and intra‐chip connects on one hand, and the economies of scale of the CMOS industry in optical communications on the other. LÄS MER

  5. 24. Epitaxy of group III-nitride materials using different nucleation schemes

    Författare :Rosalia Delgado Carrascon; Vanya Darakchieva; Daniela Gogova; Alice Hospodková; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Group III-nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wave-lengths, covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. LÄS MER

  7. 25. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Författare :Johan Bergsten; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER