Sökning: "Complementary metal oxide semiconductor CMOS"
Visar resultat 1 - 5 av 32 avhandlingar innehållade orden Complementary metal oxide semiconductor CMOS.
1. Silicon nanowire based devices for More than Moore Applications
Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER
2. Towards the Integration of Carbon nanostructures into CMOS technology
Sammanfattning : Relentless efforts for miniaturization of traditional complementary metal oxide semiconductor (CMOS) devices have reached the limit where the device characteristics are governed by quantum phenomena which are difficult to control. This engendered a need for finding alternative new materials that can be engineered to fabricate devices that will possess at least the same or even better performance than existing CMOS devices. LÄS MER
3. Novel concepts for advanced CMOS : Materials, process and device architecture
Sammanfattning : The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. LÄS MER
4. Digital Phase Locked Loops for Radio Frequency Synthesis
Sammanfattning : The demands for an ever higher data rate and a more varied functionality at minimal cost and power consumption have been the driving force behind most innovations in wireless communication systems. Intensive efforts have been made to develop Radio Frequency (RF) Integrated Circuits (ICs) and systems using low-cost Complementary Metal Oxide Semiconductor (CMOS) processes. LÄS MER
5. Low-frequency noise in high-k gate stacks with interfacial layer engineering
Sammanfattning : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. LÄS MER