Sökning: "Chalmers tekniska högskola inas"
Visar resultat 1 - 5 av 23 avhandlingar innehållade orden Chalmers tekniska högskola inas.
1. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes
Sammanfattning : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. LÄS MER
2. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications
Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER
3. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems
Sammanfattning : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. LÄS MER
4. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER
5. Self-Switching Diodes for Zero-Bias Terahertz Detection
Sammanfattning : The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent years. The SSD accomplishes a non-linear current-voltage relation through a field-effect, which enables detection at zero bias from microwave up to terahertz frequencies. In this work, SSDs were realised in two new materials; InAs and graphene. LÄS MER