Sökning: "Carl-Mikael Zetterling"

Visar resultat 11 - 15 av 20 avhandlingar innehållade orden Carl-Mikael Zetterling.

  1. 11. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER

  3. 12. High power bipolar junction transistors in silicon carbide

    Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; Electronics; Elektronik;

    Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

  4. 13. Electro-thermal simulations and measurements of silicon carbide power transistors

    Författare :Wei Liu; Carl-Mikael Zetterling; Nicholas G. Wright; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; silicon carbide; power device; metal semiconductor field-effect transistor; bipolar junction transistor; electro-thermal simulation; Elektronik; Electronics; Elektronik;

    Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER

  5. 14. Industrial Digital Fabrication Using Inkjet Technology

    Författare :Ingo Reinhold; Carl-Mikael Zetterling; Matti Mäntysalo; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; inkjet printing; droplet formation; digital fabrication; sintering; nanoparticles; printed electronics; Industrial Information and Control Systems; Industriella informations- och styrsystem; Media Technology; Medieteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : The use of acoustic waves initiated by the deformation of a microchannel is one method for generating monodisperse, micrometer-sized droplets from small orifices and is employed in piezo-electric inkjet printheads. These printheads are used in both graphical printing and digital fabrication, where functionalities, such as optical, biological, electrical or mechanical, are being produced locally. LÄS MER

  7. 15. Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes

    Författare :Arash Salemi; Mikael Östling; Carl-Mikael Zetterling; Anders Hallen; Nando Kaminski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. LÄS MER