Sökning: "CMOS integration of nanowires"

Visar resultat 6 - 10 av 11 avhandlingar innehållade orden CMOS integration of nanowires.

1. 6. Vertical Nanowire High-Frequency Transistors

   Författare :Sofia Johansson; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; III-V semiconductors; metal-oxide-semiconductor field-effect transistors; border traps; high-k;

   Sammanfattning : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. LÄS MER

3. 7. Deterministic Silicon Pillar Assemblies and their Photonic Applications

   Författare :Bikash Dev Choudhury; Anand Srinivasan; Harish Bhaskaran; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; nanopillar; nanowires; nanophotonics; nanofabrication; silicon; photovoltaics; second-harmonic generation; top-down approach; colloidal lithography; color filter; biosensor; Fysik; Physics; Teknisk materialvetenskap; Materials Science and Engineering;

   Sammanfattning : It is of paramount importance to our society that the environment, life style, science and amusement flourish together in a balanced way. Some trends in this direction are the increased utilization of renewable energy, like solar photovoltaics; better health care products, for example advanced biosensors; high definition TV or high resolution cameras; and novel scientific tools for better understanding of scientific observations. LÄS MER

4. 8. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

   Författare :Anton E. O. Persson; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

   Sammanfattning : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. LÄS MER

5. 9. Silicon Nanoribbon FET Sensors : Fabrication, Surface Modification and Microfluidic Integration

   Författare :Roodabeh Afrasiabi; Jan Linnros; Michel Calame; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Over the past decade, the field of medical diagnostics has seen an incredible amount of research towards the integration of one-dimensional nanostructures such as carbon nanotubes, metallic and semiconducting nanowires and nanoribbons for a variety of bio-applications. Among the mentioned one-dimensional structures, silicon nanoribbon (SiNR) field-effect transistors (FET) as electro-chemical nanosensors hold particular promise for label-free, real-time and sensitive detection of biomolecules using affinity-based detection. LÄS MER

7. 10. Low-Power Nanowire Circuits and Transistors

   Författare :Anil Dey; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : This thesis explores several novel material systems and innovative device concepts enabled by nanowire technology. State-of-the-art fabrication techniques such as electron beam lithography and atomic layer deposition are utilized to achieve high control and quality in the device fabrication. LÄS MER