Sökning: "CMOS compatibility"
Visar resultat 1 - 5 av 11 avhandlingar innehållade orden CMOS compatibility.
1. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology
Sammanfattning : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. LÄS MER
2. Spin Torque Oscillator Modeling, CMOS Design and STO-CMOS Integration
Sammanfattning : Spin torque oscillators (STOs) are microwave oscillators with an attractive blend of features, including a more-than-octave tunability, GHz operating frequencies, nanoscale size, nanosecond switching speed and full compatibility with CMOS technology. Over the past decade, STOs' physical phenomena have been explored to a greater extent, their performance has been further improved, and STOs have already shown great potential for a wide range of applications, from microwave sources and detectors to neuromorphic computing. LÄS MER
3. The RDGT - Integration of Micromechanics and Electronics by Plasma Assisted Wafer Bonding
Sammanfattning : A high-resolution capacitive sensing technique is presented in this thesis: the Resonant Double Gate Transistor (RDGT). The major advantage of the RDGT compared to "pure" capacitive sensing techniques is its low output impedance because of the direct capacitance to current conversion of the transistor. LÄS MER
4. Towards the Integration of Carbon nanostructures into CMOS technology
Sammanfattning : Relentless efforts for miniaturization of traditional complementary metal oxide semiconductor (CMOS) devices have reached the limit where the device characteristics are governed by quantum phenomena which are difficult to control. This engendered a need for finding alternative new materials that can be engineered to fabricate devices that will possess at least the same or even better performance than existing CMOS devices. LÄS MER
5. Toward Carbon based NEMS
Sammanfattning : A systematic analysis and assessment of carbon nanotube (CNT) based NEMS switches is presented and their features are compared to typical complementary metal-oxide-semiconductor (CMOS) performance parameters. It is shown that CNT-based switches with considerably smaller leakage current compared to CMOS switches can be realized. LÄS MER