Sökning: "CMOS Technology"

Visar resultat 6 - 10 av 255 avhandlingar innehållade orden CMOS Technology.

1. 6. CMOS High Frequency Circuits for Spin Torque Oscillator Technology

   Författare :Tingsu Chen; Ana Rusu; Jerzy Dabrowski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave integrated circuit; CMOS; spin torque oscillator; Balun-LNA; wideband amplifier; on-chip bias-tee; multi-standard multi-band radios;

   Sammanfattning : Spin torque oscillator (STO) technology has a unique blend of features, including but not limited to octave tunability, GHz operating frequency, and nanoscaled size, which makes it highly suitable for microwave and radar applications. This thesis studies the fundamentals of STOs, utilizes the state-of-art STO's advantages, and proposes two STO-based microwave systems targeting its microwave applications and measurement setup, respectively. LÄS MER

3. 7. Spin Torque Oscillator Modeling, CMOS Design and STO-CMOS Integration

   Författare :Tingsu Chen; Ana Rusu; Atila Alvandpour; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; STO technology; microwave oscillator; analytical model; macrospin approximation; Verilog-A model; high frequency CMOS circuits; balun-LNA; STO-IC integration; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Spin torque oscillators (STOs) are microwave oscillators with an attractive blend of features, including a more-than-octave tunability, GHz operating frequencies, nanoscale size, nanosecond switching speed and full compatibility with CMOS technology. Over the past decade, STOs' physical phenomena have been explored to a greater extent, their performance has been further improved, and STOs have already shown great potential for a wide range of applications, from microwave sources and detectors to neuromorphic computing. LÄS MER

4. 8. Towards an on-chip power supply: Integration of micro energy harvesting and storage techniques for wireless sensor networks

   Författare :Agin Vyas; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Microsuperca- pacitor; On-chip power supply.; Piezoelectric energy harvester; CMOS compatible; MEMS;

   Sammanfattning : The lifetime of a power supply in a sensor node of a wireless sensor network is the decisive factor in the longevity of the system. Traditional Li-ion batteries cannot fulfill the demands of sensor networks that require a long operational duration. LÄS MER

5. 9. Ultra precision metrology : the key for mask lithography and manufacturing of high definition displays

   Författare :Peter Ekberg; Lars Mattsson; Torgny Carlsson; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ultra precision metrology; LCD-display; OLED-display; nm-resolution; large area; random phase measurement; acousto-optic deflection; scanning; 2D measurement; mask; CCD; CMOS; image processing; edge detection; TECHNOLOGY; TEKNIKVETENSKAP; Manufacturing engineering; Produktionsteknik;

   Sammanfattning : Metrology is the science of measurement. It is also a prerequisite for maintaining a high quality in all manufacturing processes. In this thesis we will present the demands and solutions for ultra-precision metrology in the manufacturing of lithography masks for the TV-display industry. LÄS MER

7. 10. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

   Författare :Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. LÄS MER