Sökning: "Branched nanowire structure"
Visar resultat 1 - 5 av 6 avhandlingar innehållade orden Branched nanowire structure.
1. Bioelectronic Nanosensor Devices for Environmental and Biomedical Analysis
Sammanfattning : A new type of Bioelectronic Nanosensor Device with potential applications in medicine,biotechnology and environmental analysis was designed. The nanosensor is based on RISFET (Regional Ion Sensitive Field Effect Transistor) technology. LÄS MER
2. Tailoring the Optical Response of III-V Nanowire Arrays
Sammanfattning : Semiconductor nanowires show a great deal of promise for applications in a wide range of important fields, including photovoltaics, biomedicine, and information technology. Developing these exciting applications is strongly dependent on understanding the fundamental properties of nanowires, such as their optical resonances and absorption spectra. LÄS MER
3. Understanding and Optimization of III-V nanowire growth in Aerotaxy
Sammanfattning : III-V semiconductor nanowires are high aspect ratio nanostructures with superior properties that can potentially enhance the functionality of next-generation opto-electronic devices. At present, the most reliable method for fabricating III-V semiconductor nanowires is the particle-assisted vapor-liquid-solid growth using a substrate-based growth process. LÄS MER
4. Transmission Electron Microscopy of Semiconductor Nanowires
Sammanfattning : Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in this work. In the first section, the growth mechanism of gallium arsenide nanowires grown by chemical beam epitaxy is investigated. The nanowires are epitaxially grown from a gallium arsenide substrate by using gold seed particles as catalysts. LÄS MER
5. Epitaxial Growth and Design of Nanowires and Complex Nanostructures
Sammanfattning : This thesis describes the epitaxial growth of III-V semiconductor nanowires using Au seed particles, and the design of more complex three-dimensional branched structures from these wires. Growth was performed by metallorganic vapour phase epitaxy, in which precursor molecules for the semiconductor material components are introduced in a low-pressure vapour. LÄS MER