Sökning: "Aliette Mouroux"
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1. The reactive formation of TiSi2in the presence of refractory metals
Sammanfattning : Titanium disilicide (TiSi2) has been the favoured material for contactmetallisation in recent Si devices. The formation of TiSi2usually begins with the high resistivity C49 phaseas a result of the Ti-Si interaction at about 300-550 °Cand finishes with the low resistivity C54 phase through theC49-C54 phase transformation at about 700 °C. LÄS MER
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