Sökning: "ALD"

Visar resultat 6 - 10 av 58 avhandlingar innehållade ordet ALD.

  1. 6. Thin Film Synthesis of Nickel Containing Compounds

    Författare :Erik Lindahl; Jan-Otto Carlsson; Jens Birch; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemical Vapor Deposition; CVD; Atomic Layer Deposition; ALD; Nickel nitride; Nickel oxide; Nickel; Epitaxy; multilayer; Thin film; Inorganic chemistry; Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Sammanfattning : Most electrical, magnetic or optical devices are today based on several, usually extremely thin layers of different materials.  In this thesis chemical synthesis processes have been developed for growth of less stable and metastable layers, and even multilayers, of nickel containing compounds. LÄS MER

  3. 7. Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates

    Författare :Tobias Törndahl; Jan-Otto Carlsson; Karin Larsson; Mikael Ottosson; Lauri Niinistö; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; Atomic Layer Deposition; ALD; copper; copper I oxide; copper I nitride; deposition pathway; CuCl; Cu hfac 2; oxide substrates; epitaxy; DFT; ab-initio; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi;

    Sammanfattning : Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. LÄS MER

  4. 8. Novel concepts for advanced CMOS : Materials, process and device architecture

    Författare :Dongping Wu; KTH; []
    Nyckelord :CMOS technology; MOSFET; high-k; gate dielectric; ALD; surface pre-treatment; metal gate; poly-SiGe; strained SiGe; surface-channel; buried-channel; notched gate;

    Sammanfattning : The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. LÄS MER

  5. 9. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER

  7. 10. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

    Författare :Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. LÄS MER