Sökning: "50 GHz"
Visar resultat 1 - 5 av 63 avhandlingar innehållade orden 50 GHz.
1. Mixers and Multifunctional MMICs for Millimeter-Wave Applications
Sammanfattning : This thesis treats the design and characterization of different mixer and multifunctional monolithic microwave integrated circuits (MMICs) in GaAs pHEMT and mHEMT technologies. The MMICs operate at the V (50 – 75 GHz) and G (140 – 220 GHz) bands and several of them demonstrate state-of-the-art performance, level of integration, novel topologies, and/or novel functionality. LÄS MER
2. Flip-Chip Interconnect for Millimeter-Wave Packaging Applications
Sammanfattning : In recent years, with the demands for wireless communication systems increas rapidly, the operating frequency for the portable wireless is moving toward millimeter-waves. Millimeter-wave wireless communication systems require not only suitable functional IC components but also competent package with low cost and good interconnect performance. LÄS MER
3. Development of Cryogenic Low Noise 4-8 GHz HEMT Amplifier and its Advanced Characterization
Sammanfattning : In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermediate frequency (IF) amplifiers. The system noise temperature is among the most important parameters of a receiver and requires state of the art components. LÄS MER
4. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes
Sammanfattning : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. LÄS MER
5. Heterostructure Field-Effect Transistors for Millimeter Wave Applications
Sammanfattning : This thesis deals with the development of low-noise heterostructure field-effect transistors (HFETs) on III-V materials. The emphasis is on devices for high gain and low noise applications. Fabrication processes have been developed and transistors have been fabricated and characterized. LÄS MER