Sökning: "3D integration"

Visar resultat 1 - 5 av 114 avhandlingar innehållade orden 3D integration.

1. 1. Integration and Fabrication Techniques for 3D Micro- and Nanodevices

   Författare :Andreas C. Fischer; Frank Niklaus; Karl F. Böhringer; KTH; []
   Nyckelord :Microelectromechanical systems; MEMS; Nanoelectromechanical systems; NEMS; silicon; wafer-level; chip-level; through silicon via; TSV; packaging; 3D packaging; vacuum packaging; liquid encapsulation; integration; heterogeneous integration; wafer bonding; microactuators; shape memory alloy; SMA; wire bonding; magnetic assembly; self-assembly; 3D; 3D printing; focused ion beam; FIB;

   Sammanfattning : The development of micro and nano-electromechanical systems (MEMS and NEMS) with entirely new or improved functionalities is typically based on novel or improved designs, materials and fabrication methods. However, today’s micro- and nano-fabrication is restrained by manufacturing paradigms that have been established by the integrated circuit (IC) industry over the past few decades. LÄS MER

3. 2. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

4. 3. Towards 3D Integration of Carbon Based Electronics

   Författare :Wei Mu; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; transfer; carbon nanomaterials; polymer filling; MWCNTs; interconnect; 3D integration; packaging; graphene; horizontally aligned SWCNTs; through silicon via;

   Sammanfattning : Carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene, which possess superior electrical, thermal and mechanical properties, have been proposed as alternative materials for future electronics. The proposed applications span from the device level, replacing silicon-based transistors, with single-walled carbon nanotubes (SWCNTs) or graphene, to packaging level using multi-walled carbon nanotubes (MWCNTs) for interconnects. LÄS MER

5. 4. Sequential 3D Integration - Design Methodologies and Circuit Techniques

   Författare :Panagiotis Chaourani; Ana Rusu; Saul Rodriguez; Per-Erik Hellström; Georges Gielen; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; sequential 3D integration; monolithic inter-tier vias; design platforms; parasitic extraction flows; RF AMS circuits; inductors; heterogeneous integration; germanium transistors; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Sequential 3D (S3D) integration has been identified as a potential candidate for area efficient ICs. It entails the sequential processing of tiers of devices, one on top the other. LÄS MER

7. 5. The Integration of 3D Geodata and BIM Data in 3D City Models and 3D Cadastre

   Författare :Jing Sun; Kent Eriksson; Anders Östman; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 3D geodata; BIM; city models; 3D cadastre; geometric quality; CityGML; LADM; laser scanning; Geodesy and Geoinformatics; Geodesi och geoinformatik; Geodesi; Geodesy;

   Sammanfattning : The initial geographic information system (GIS) and building information modelling (BIM) are designed and developed independently in order to serve different purposes and use. Within the prolific increase and growing maturity of three-dimensional (3D) technology, both 3D geodata and BIM data can specify semantic data and model 3D buildings that are prominent for the 3D city models and 3D cadastre. LÄS MER