Sökning: "2DEG"

Visar resultat 16 - 20 av 31 avhandlingar innehållade ordet 2DEG.

  1. 16. Electron Transport in Low Dimensional Systems

    Författare :Peter Ramvall; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; high mobility; low-dimensional structures; III-V semiconductors; quantum wells; heterojunctions; quantum Hall effect; edge channels; Shubnikov-de Haas effect; alloy-disorder scattering; Y-branch switch; two dimensional electron gas; Fysik; Fysicumarkivet A:1996:Ramvall; Physics; spin splitting; mag;

    Sammanfattning : This thesis consists of experimental studies of transport properties in high mobility two dimensional electron gases (2DEGs). Two material systems are used, an AlGaAs/GaAs heterojunction and a GaInAs/InP quantum well. LÄS MER

  3. 17. Electron Transport and Chaos in Model Mesoscopic Systems

    Författare :Thomas Ouchterlony; Hongqi Xu; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : In this thesis mesoscopic structures intermediate in size between classical macroscopic objects and quantum mechanical objects as atoms are treated. The size of mesoscopic systems are of the same order as the wavelength of the electrons, which makes it necessary to take quantum mechanics into account. LÄS MER

  4. 18. MOCVD growth of GaN-based high electron mobility transistor structures

    Författare :Jr-Tai Chen; Erik Janzén; Urban Forsberg; James S. Speck; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. LÄS MER

  5. 19. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

    Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

    Sammanfattning : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. LÄS MER

  7. 20. Adventures of III-V Semiconductor Surfaces

    Författare :Sandra Benter; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

    Sammanfattning : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. LÄS MER