Sökning: "2DEG"

Visar resultat 11 - 15 av 31 avhandlingar innehållade ordet 2DEG.

1. 11. Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects

   Författare :Jie Sun; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor; Quantum Dots; Ballistic Transport; InGaAs InP 2DEG; Nanoelectronics;

   Sammanfattning : As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. With this background, the present thesis focuses on semiconductor nanoelectronic devices based on ballistic and quantum effects. The main material studied was a modulation doped In0. LÄS MER

3. 12. Electronic structure of clean and adsorbate-covered InAs surfaces

   Författare :Karolina Szamota-Leandersson; Ulf Otto Karlsson; Vladimir Chab; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; angle-resolved photoemission; electronic structure; accumulation layer; adatoms; reconstruction; Surfaces and interfaces; Ytor och mellanytor;

   Sammanfattning : This thesis is the result of investigations regarding the processes in InAs III-V semiconductor surfaces induced by additional charge incorporated by adsorbates. The aim of the project is to study the development of the accumulation layer on the metal/InAs(111)A/B surfaces and its electronic structure. LÄS MER

4. 13. Theoretical and optical investigations of some III-V based quantum wells and modulation doped heterostructures

   Författare :Thomas Lundström; Maurice S. Skolnick; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : This thesis is based on a combination of theoretical calculations and optical studies of the electronic structure and the radiative recombination processes in some III-V based quantum wells and ?-type modulation doped heterostructures. The optical studies includes photoluminescence (PL) spectroscopy, PL excitation (PLE) spectroscopy, and time-resolved PL. LÄS MER

5. 14. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

   Författare :Chen Ding Yuan; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; QuanFINE; passivation; GaN HEMT; pretreatment; ohmic contact;

   Sammanfattning : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. LÄS MER

7. 15. Quantum electronic transport in low-dimensional semiconductors

   Författare :Heiner Linke; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum transport; two-dimensional electron gas; contact-free characterisation; ballistic transport; mesoscopic; electron billiard; quantum dot; electron-electron interaction; non-linear; phase breaking; Halvledarfysik; Fysicumarkivet A:1997:Linke; non-symmetric conductio; Semiconductory physics; low-dimensional structures;

   Sammanfattning : Electronic transport is studied at low temperatures in two-dimensional electron gases (2DEGs) and in mesoscopic semiconductor microstructures. The method of microwave-detection of the Shubnikov-de Haas effect for the contact-free characterisation of transport properties of 2DEGs is explored using both magnetic-field modulation and light-induced carrier modulation. LÄS MER