Sökning: "1200 V"

Visar resultat 1 - 5 av 20 avhandlingar innehållade orden 1200 V.

1. 1. MORAXELLA CATARRHALIS OUTER MEMBRANE PROTEINS AND INTERACTIONS WITH THE HUMAN IMMUNE SYSTEM

   Författare :Therése Nordström; Malmö Klinisk mikrobiologi; []
   Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; mycology; Mikrobiologi; virology; Microbiology; C4BP; B-cells; UspA2; Moraxella catarrhalis; virologi; mykologi; bakteriologi; bacteriology; C3; IgD; Moraxella IgD-bindning protein; UspA1;

   Sammanfattning : Moraxella catarrhalis is frequently colonizing the human respiratory tract, particularly in children. This gram-negative bacterium has during the last two decades been recognized as a pathogen causing otitis media in children and lower respiratory tract infections in adults with predisposing conditions such as chronic obstructive pulmonary disease (COPD). LÄS MER

3. 2. Powder-metallurgical processing and phase separation in ternary transition metal carbides

   Författare :Taoran Ma; Joakim Odqvist; Peter Hedström; Hans-Olof Andren; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Teknisk materialvetenskap; Materials Science and Engineering;

   Sammanfattning : Ternary transition metal cubic carbides have high hardness and are potential carbides in cemented carbide and cermet tools, as well as hard coatings used to improve metal cutting performance. In the present work, (Ti,Zr)C, (V,Nb)C, and (V,Ta)C ternary cubic carbides were synthesized using traditional powder-metallurgical methods. LÄS MER

4. 3. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER

5. 4. High power bipolar junction transistors in silicon carbide

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; Electronics; Elektronik;

   Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

7. 5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

   Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER