Nonstoichiometric Multicomponent Nitride Thin Films

Sammanfattning: High entropy ceramics have rapidly developed as a class of materials based on high entropy alloys; the latter being materials that contain five or more elements in near-equal proportions. Their unconventional compositions and chemical structures hold promise for achieving unprecedented combinations of mechanical, electrical and chemical properties. In this thesis, high entropy ceramic films, (TiNbZrTa)Nx were deposited using reactive magnetron sputtering with segmented targets. The stoichiometry x was tuned with two deposition parameters, i.e., substrate temperature and nitrogen flow ratio fN, their effect on microstructure and mechanical, electric, and electrochemical properties were investigated.Understoichiometric MeNx (Me = TiNbZrTa, 0.25 ≤ x ≤ 0.59) films were synthesized at a constant fN when substrate temperature was varied from room temperature (RT) to 700 °C. For low-temperature deposition, the coatings exhibited fcc solid-solution polycrystalline structures. A NaCl-type structure with (001) preferred orientation was observed in MeN0.46 coating deposited at 400 ºC, while an hcp structure was found for the coatings deposited above 500 ºC. The maximum hardness value of 26 GPa as well as the highest   and   values (0.12 and 0.34 GPa) were obtained for the MeN0.46 coating. These films exhibited low RT electrical resistivities. In 0.1 M H2SO4 aqueous solution, the most corrosion resistant film was MeN0.46 featured dense structure and low roughness.The MeNx films (x=0, 0.57 < x ≤ 0.83) were deposited with different fN. The maximum hardness was achieved at 22.1 GPa for MeN0.83 film. Their resistivities increased from 95 to 424 μΩcm with increasing nitrogen content. The corrosion resistance is related to the amount of nitrogen in the films. The corrosion current density was around 10-8 A/cm2, while the films with lower nitrogen contents (x < 0.60) exhibited a nearly stable current plateau up to 4.0 V, similar to the metallic films, while the films with a higher nitrogen content only featured a plateau up to 2.0 V, above which a higher nitrogen content resulted in higher currents. The reason was that the oxidation of these films at potentials above about 2.0 V vs. Ag/AgCl resulted in the formation of porous oxide layers as significant fraction of the generated N2 was lost to the electrolyte.Hence, these observed effects of deposition temperature and nitrogen content on the overall properties of nonstoichiometric MeNx films provide insights regarding protective multicomponent nitride films, e.g. as corrosion resistant coatings on metallic bipolar plates in fuel cells or batteries.