Block Copolymer Lithography. Applications for Sub-50 nm High-Density Nanostructures

Sammanfattning: As high technology device functionalities seem to constantly be moving towards decreasing critical dimensions and increasing density, there is a need for lithography research to move in the same direction. Block copolymer (BCP) lithography is a promising technique, which has single-digit nanometer resolution, typically has a pattern periodicity of 10-50 nm, and easily scales up the patterned area at a low cost. The use of high c BCP enables smaller pattern dimensions, and is therefore of special interest. However, it is not enough to develop the lithography technique, but it also needs to be integrated into existing processing. This thesis provides an overview of the BCP lithography field in general, and studies the selective infiltration synthesis of Alumina into the Maltoheptaose block in high c Poly(Styrene)-block-Maltoheptaose of 10-12 nm pattern periodicity in particular. Also, it studies the process of surface reconstruction of high c Poly(Styrene)-block-Poly(4-Vinylpyridine) of 50 nm pattern periodicity, more specifically the effect of time and temperature on pore diameter. Furthermore, pattern transfer of the surface reconstructed BCP film into Silicon Nitride, and selective area metal-organic vapor phase epitaxy (SA-MOVPE) of Indium Arsenide vertical nanowires is demonstrated. The results should be a stepping stone towards integrating BCP lithography into research, enabling new possibilities and applications.