Sökning: "wide band gap devices"
Visar resultat 1 - 5 av 41 avhandlingar innehållade orden wide band gap devices.
1. Silicon Carbide Microwave Devices
Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER
2. Optical characterization of wide band gap materials by spectroscopic ellipsometry
Sammanfattning : Spectroscopic ellipsometry has been employed in the study of wide band gap materials. Ellipsometry is based on the study of changes in the polarization state of light upon reflection on a surface. LÄS MER
3. Growth and Characterization of Metastable Wide Band-Gap Al1-xInxN Epilayers
Sammanfattning : InN to 6.2 eV for AlN, which opens possibilities to engineer opto-electronic devices operating from infra-red to deep ultra-violet wavelengths. Al1-xInxN with the alloy composition x~0.2 can also be used as a lattice-matched electron confinement layer for GaN based electronic devices. LÄS MER
4. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Sammanfattning : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. LÄS MER
5. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
Sammanfattning : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. LÄS MER