Sökning: "silicon on silicon carbide"

Visar resultat 1 - 5 av 147 avhandlingar innehållade orden silicon on silicon carbide.

  1. 1. Silicon Carbide Microwave Devices

    Författare :Joakim Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  3. 2. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

    Författare :S. A. Perez-Garcia; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

    Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER

  4. 3. Gate Control and System Aspects of Silicon Carbide JFETs

    Författare :Björn Ållebrand; KTH; []
    Nyckelord :Power JFET; Silicon Carbide; PSpice; Simulations; Gate drive; Blanking times; Normally-on.;

    Sammanfattning : .... LÄS MER

  5. 4. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Författare :Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER

  7. 5. Compact Modeling of Si and SiC Power Diodes

    Författare :Rémy Kolessar; KTH; []
    Nyckelord :TCAD; power diode; circuit simulation; physics-based modeling; turn-on; turn-off; forward recovery; reverse recovery; silicon; silicon carbide;

    Sammanfattning : .... LÄS MER