Sökning: "silicon on insulator"

Visar resultat 1 - 5 av 81 avhandlingar innehållade orden silicon on insulator.

1. 1. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

3. 2. Schottky Contacs on Silicon Nanowires

   Författare :Johan Piscator; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Silicon On Insulator SOI ; Schottky contacts; Palladium silicide; Silicon nanowire;

   Sammanfattning : This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the end surfaces of silicon nanowires. It is shown, by measurements and analytical models, how the effective electron barrier is lowered by a positive charge introduced into an oxide embedding the wire. LÄS MER

4. 3. Submillimeter-Wave Waveguide Frontends by Silicon-on-Insulator Micromachining

   Författare :Adrian Gomez-Torrent; Joachim Oberhammer; Umer Shah; Goutam Chattopadhyay; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; antenna; orthomode transducer; switch; waveguide; radiofrequency; beamforming network; submillimeter-wave; terahertz; silicon micromachining; deep reactive ion etching; silicon on insulator; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : This thesis presents novel radiofrequency (RF) frontend components in the submillimeter-wave (sub-mmW) range implemented by silicon micromachining, or deep reactive ion etching (DRIE). DRIE is rapidly becoming a driving technology for the fabrication of waveguide components and systems when approaching the terahertz (THz) frequency range. LÄS MER

5. 4. The Buried Oxide of Silicon on Insulator Materials

   Författare :Per Ericsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxide defects; internal oxidation; aluminum oxide; wafer bonding; SOI; silicon on insulator; buried oxide;

   Sammanfattning : The buried oxide of silicon on insulator (SOI) wafers plays an important role in the operation of electronic devices made on such materials. The presence of defects in the buried oxide can seriously degrade the performance of a circuit. LÄS MER

7. 5. The influence of surface microroughness on wafer bonding

   Författare :Mats Bergh; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AFM; hydrophilic; surface roughness; diamond; silicon-on-insulator; poly silicon; silicon-on-diamons; atomic force microscope; wafer bonding; SOI; aluminum nitride; hydrophobic;

   Sammanfattning : .... LÄS MER