Sökning: "silicon bipolar transistor"

Visar resultat 1 - 5 av 34 avhandlingar innehållade orden silicon bipolar transistor.

1. 1. Chemical Mechanical Polishing of Silicon and Silicon Dioxide in Front End Processing

   Författare :Markus Forsberg; Jörgen Olsson; Jyrki Molarius; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; chemical mechanical polishing; chemical mechanical planarization; silicon; silicon dioxide; front end; shallow trench isolation; deep trench isolation; bipolar transistor; BiCMOS; wafer bonding; Elektronik; Electronics; Elektronik;

   Sammanfattning : Chemical mechanical polishing (CMP) has been used for a long time in the manufacturing of prime silicon wafers for the IC industry. Lately, other substrates, such as silicon-on-insulator has become in use which requires a greater control of the silicon CMP process. LÄS MER

3. 2. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

   Författare :Staffan Bruce; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

   Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

4. 3. Process Design Kit and High-Temperature Digital ASICs in Silicon Carbide

   Författare :Muhammad Shakir; Carl-Mikael Zetterling; B. Gunnar Malm; Philip Mawby; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; high-temperature digital integrated circuits; process design kit PDK ; bipolar logic gates; transistor-transistor logic TTL ; TTL CPU; bipolar transistor; LSI Circuits; ASICs; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Electronics such as microprocessors are highly demanded to monitor or control a process or operation in temperature critical (300 ºC to 600 °C) applications. State-of-the-art silicon-based integrated circuits (ICs) have been improved significantly throughout the years but mainly for a low-temperature ambient. LÄS MER

5. 4. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

   Författare :Erik Danielsson; KTH; []
   Nyckelord :silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

   Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER

7. 5. SiGeC Heterojunction Bipolar Transistors

   Författare :Erdal Suvar; KTH; []
   Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

   Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER