Sökning: "remote phonons"

Hittade 3 avhandlingar innehållade orden remote phonons.

  1. 1. Effects of impurities on charge transport in graphene field-effect transistors

    Författare :Marlene Bonmann; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carrier transport; electron and hole mobility; impurities; traps; graphene; field-effect transistors; microwave devices; saturation velocity; remote phonons;

    Sammanfattning : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. LÄS MER

  3. 2. Graphene field-effect transistors and devices for advanced high-frequency applications

    Författare :Marlene Bonmann; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; traps; graphene; self-heating; field-effect transistors; remote phonons; carrier transport; saturation velocity; microwave devices; impurities and defects;

    Sammanfattning : New device technologies and materials are continuously investigated, in order to increase the bandwidth of high-speed electronics, thereby extending data rate and range of applications. The 2D-material graphene, with its intrinsically extremely high charge carrier velocity, is considered as a promising new channel material for advanced high frequency field-effect transistors. LÄS MER

  4. 3. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

    Författare :Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

    Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER