Sökning: "near-field microscopy"

Visar resultat 1 - 5 av 13 avhandlingar innehållade orden near-field microscopy.

  1. 1. Design and applications of an aperture-type near-field scanning optical microscope

    Författare :Juris Prikulis; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; surface plasmons; SERS; surface-enhanced Raman scattering; metal nonparticles; near-field scanning optical microscopy; NSOM;

    Sammanfattning : .... LÄS MER

  3. 2. Near-field scanning optical microscopy and fractal characterization with atomic force microscopy and other methods

    Författare :Anders Mannelquist; Luleå tekniska universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Fysik; Fysik;

    Sammanfattning : This thesis is devoted to the development of near-field scanning optical microscopy (NSOM) for aqueous solutions and to fractal characterization of steel surfaces with atomic force microscopy (AFM) and other methods. NSOM combines optical properties from a light microscope and the technique of scanning probe microscopy, SPM (invented in the early 1980’s). LÄS MER

  4. 3. Localization effects in ternary nitride semiconductors

    Författare :Vytautas Liuolia; Saulius Marcinkevicius; Toshiharu Saiki; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; AlGaN; InGaN; AlInN; LEDs; near-field microscopy; carrier dynamics; alloy fluctuations; carrier localization; built-in electric field; nonpolar planes; polarized luminescence;

    Sammanfattning : InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. LÄS MER

  5. 4. Impact of carrier localization on recombination in InGaN quantum wells with nonbasal crystallographic orientations

    Författare :Ruslan Ivanov; Saulius Marcinkevičius; Nicolas Grandjean; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InGaN; quantum well; semipolar; nonpolar; near-field microscopy; carrier localization; carrier transport; optical polarization; Fysik; Physics;

    Sammanfattning : The modern InGaN technology demonstrates high efficiencies only in the blue spectral region and low current operation modes. The growth of InGaN quantum wells (QWs) on nonbasal crystallographic planes (NBP) has potential to deliver high-power blue and green light emitting diodes and lasers. LÄS MER

  7. 5. Optical properties of GaN and InGaN studied by time- and spatially-resolved spectroscopy

    Författare :Tomas Uždavinys; Saulius Marcinkevičius; Audrius Alkauskas; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Gallium nitride; InGaN; near-field microscopy; photoexcited carrier dynamics; intervalley energy; Fe centers; In incorporation; Physics; Fysik;

    Sammanfattning : The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN LEDs are substituting incandescent light bulbs, space satellite industry adopting ion-radiation-resistant GaN transistors, and AlGaN deep UV LEDs are increasingly being used for water disinfection and air purification. LÄS MER