Sökning: "narrow gap semiconductors"

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden narrow gap semiconductors.

  1. 1. Thermoelectric Properties of Antimony Based Networks

    Författare :Andreas Tengå; Sven Lidin; Michael Ruck; Stockholms universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; thermoelectric; narrow gap semiconductors; zinc antimonides; cadmium antimonides; chalcopyrites; sphalerites; Inorganic chemistry; Oorganisk kemi; Materials Chemistry; materialkemi;

    Sammanfattning : With the retreating sources of carbon based fuels, thermoelectric materials can play an important role in the future of environmentally friendly power generators. Sb based framework have in some cases shown some promising properties as thermoelectric materials. The physical properties may be modified with doping or incorporation of new elements. LÄS MER

  3. 2. Density functional calculations of optical spectra and narrow band systems

    Författare :Anna Delin; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik; Physics; Fysik; Fysik; Physics;

    Sammanfattning : A calculational method, based on density functionaltheory, has been used to calculate optica spectra for a wide range of systems,as well as ground-state properties of some narrow-band systems. A systematic study of the trends in the optical properties of the 4Brefractory metal compounds has been performed. LÄS MER

  4. 3. Electrical Characterization of III-V Nanostructure

    Författare :Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Nyckelord :High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Sammanfattning : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. LÄS MER

  5. 4. On the Growth and Properties of InAs/Ga1-xInxSb Superlattices and Related Materials

    Författare :Jöran H. Roslund; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; molecular-beam epitaxy; InAs Ga1-xInxSb superlattices; envelope-function calculations; lattice-mismatched semiconductors; Si-doping of Ga1-xInxSb; type-II superlattices;

    Sammanfattning : InAs/Ga1-xInxSb semiconductor superlattices and their constituent materials have been studied theoretically, grown by molecular-beam epitaxy and characterised by various techniques. InAs/Ga1-xInxSb superlattices are interesting for use in far-infrared detectors because of their narrow band gaps. LÄS MER

  7. 5. Electronic structure and optical properties of PbY and SnY (Y=S, Se, and Te)

    Författare :Nilton Souza Dantas; Clas Persson; Natalia Skorodumova; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Other materials science; Övrig teknisk materialvetenskap;

    Sammanfattning : Lead chalcogenides and tin chalcogenides and their alloys are IV−VI family semiconductors with unique material properties compared with similar semiconductors. For instance, PbY (Y = S, Se, and Te) are narrow-gap semiconductors with anomalous negative pressure coefficient and positive temperature coefficient. LÄS MER