Sökning: "nanowire arrays"
Visar resultat 1 - 5 av 32 avhandlingar innehållade orden nanowire arrays.
1. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
Sammanfattning : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. LÄS MER
2. III-V Nanowire Solar Cells: Growth and Characterization
Sammanfattning : To mitigate dangerous climate change, a transition to a new and sustainable energy system is needed. In this system, solar energy will need to be a key player. Prices of electricity made from solar cells have declined rapidly over the recent decades, making solar energy competitive in more markets. LÄS MER
3. Infrared Photodetectors based on Nanowire Arrays with Embedded Quantum Heterostructures
Sammanfattning : Optical sensors operating in the infrared range of the electromagnetic spectrum are key components in a variety ofapplications including optical communication, night vision, medical diagnosis, surveillance, and astronomy.Semiconductor nanowires have great potential for realizing broadband infrared photodetectors with excellentresponsivity, low dark current and low noise, and a unique compatibility with commercial silicon-based electronics. LÄS MER
4. Optical Imaging for Nanowire Mechanics
Sammanfattning : In this work, we present a stroboscopic detection technique for the study of oscillating nanoscale objects. This optical read-out gives a position accuracy better than 1 nm which is a fraction of both the diffraction limit and the pixel size. LÄS MER
5. Nanophotonics in absorbing III-V nanowire arrays
Sammanfattning : We have studied the interaction of light with an array of vertically oriented III-V semiconductor nanowires both theoretically and experimentally. For the theoretical studies, electromagnetic modeling has been employed. LÄS MER
