Sökning: "low-noise amplifier"

Visar resultat 16 - 20 av 58 avhandlingar innehållade orden low-noise amplifier.

  1. 16. Nonlinearity mitigation in phase-sensitively amplified optical transmission links

    Författare :Kovendhan Vijayan; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; copier-PSA; nonlinearity mitigation; phase-sensitive amplifier; self-phase modulation mitigation; low-noise amplification; optical transmission; crossphase modulation mitigation;

    Sammanfattning : The fundamental limitations in fiber-optic communication are caused by optical amplifier noise and the nonlinear response of the optical fibers. The quantum-limited noise figure of erbium-doped fiber amplifier (EDFA) or any phase-insensitive amplifier is 3 dB. LÄS MER

  3. 17. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

    Författare :Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; magnetic field; cryogenic; low noise amplifier; angular dependence; InP HEMT; geometrical magnetoresistance;

    Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. LÄS MER

  4. 18. III-V Nanowire MOSFET High-Frequency Technology Platform

    Författare :Stefan Andric; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; III-V; nanowire NW ; Technology library; Process Monitor Structures; Radio Frequency; millimeter wave mmWave ; Compact Modelling; Circuit Design; Matching Networks; Low Noise Amplifier;

    Sammanfattning : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. LÄS MER

  5. 19. Low-Power HEMT LNAs for Quantum Computing

    Författare :Yin Zeng; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low-noise amplifier; qubit; Cryogenic; InP HEMT.; quantum computing; low-power;

    Sammanfattning : The rapid development of quantum computing technology predicts much more qubits to handle in the detection, readout, and amplification of qubits than in today's system. Due to the limited cooling capability of the dilution refrigerator, the current low-noise amplifiers (LNAs) are in need of ten to hundred times reduced dc power consumption yet with lowest noise temperature at qubit readout frequencies, typcially 4-12 GHz. LÄS MER

  7. 20. Design Aspects of Fully Integrated Multiband Multistandard Front-End Receivers

    Författare :Adiseno; KTH; []
    Nyckelord :low-noise amplifier; mixer; RF front-end; wireless receiver; noise figure; linearity; bandwidth; dual-loop feedback;

    Sammanfattning : In this thesis, design aspects of fully integrated multibandmultistandard front-end receivers are investigated based onthree fundamental aspects: noise, linearity and operatingfrequency. System level studies were carried out to investigatethe effects of different modulation techniques, duplexing andmultiple access methods on the noise, linearity and selectivityperformance of the circuit. LÄS MER