Sökning: "linearity"

Visar resultat 1 - 5 av 231 avhandlingar innehållade ordet linearity.

  1. 1. Design Aspects of Fully Integrated Multiband Multistandard Front-End Receivers

    Författare :Adiseno; KTH; []
    Nyckelord :low-noise amplifier; mixer; RF front-end; wireless receiver; noise figure; linearity; bandwidth; dual-loop feedback;

    Sammanfattning : In this thesis, design aspects of fully integrated multibandmultistandard front-end receivers are investigated based onthree fundamental aspects: noise, linearity and operatingfrequency. System level studies were carried out to investigatethe effects of different modulation techniques, duplexing andmultiple access methods on the noise, linearity and selectivityperformance of the circuit. LÄS MER

  3. 2. Karl-Birger Blomdahl et Ingvar Lidholm: Enjeux mélodiques, tonals et organiques des années 1940

    Författare :Cécile Bardoux Lovén; Jacob Derkert; Nicolas Meeùs; Pascal Decroupet; Stockholms universitet; []
    Nyckelord :HUMANIORA; HUMANITIES; Sweden; Blomdahl; Lidholm; Monday Group; the 1940s; melody; linearity; tonality; organicism; Jeppesen; Hindemith; Kurth; Schenker; Meyer; Rosenberg; anti-romanticism; absolute music; Musicology; musikvetenskap;

    Sammanfattning : Karl-Birger Blomdahl (1916-1968) and Ingvar Lidholm (1921- ) were two leading figures in modern Swedish music. While studying in Stockholm they created a study circle known as the Monday Group. Regarded as anti-romanticists, Blomdahl and Lidholm revitalized musical creation by prioritizing compositional technique (as in hantverk, i.e. LÄS MER

  4. 3. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

    Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

    Sammanfattning : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. LÄS MER

  5. 4. Design of narrowband circuits using describing functions

    Författare :Jesper Bank; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; phase noise; mixer; symbolic analysis; distortion; oscillator; describing functions; linearity; power amplifier; efficiency; field effect transistor; conversion gain; noise;

    Sammanfattning : .... LÄS MER

  7. 5. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors

    Författare :B. Gunnar Malm; KTH; []
    Nyckelord :Silicon-Germanium SiGe ; heterojunction bipolar transistor HBT ; low-frequency noise; high-frequency noise; harmonic distortion; linearity; device simulation; collector profile; epitaxial base integration; radio frequency RF ; radio frequency inte;

    Sammanfattning : .... LÄS MER