Sökning: "intersubband transition"

Visar resultat 1 - 5 av 10 avhandlingar innehållade orden intersubband transition.

  1. 1. GaN/AlN Multiple Quantum Well Structures

    Författare :Xinju Liu; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Sammanfattning : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. LÄS MER

  3. 2. Quantum-confined stark effect in different quantum well structures

    Författare :Weiquan Chen; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; stark effect; intersubband transition; photoluminescence; interband transitions; modulators; nonparabolicity; exciton; quantum well; oscillator strength; SEED and photodetectors;

    Sammanfattning : .... LÄS MER

  4. 3. Gallium nitride templates and its related materials for electronic and photonic devices

    Författare :Thomas Aggerstam; Sebastian Lourdudoss; Marc Ilegems; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; heteroepitaxy of GaN; BGaAlN; Fe doped GaN; HEMT; carrier capture cross section; intersubband transition modulator; Materials science; Teknisk materialvetenskap;

    Sammanfattning :  .... LÄS MER

  5. 4. InGaAs-based quantum dots for infrared imaging applications : growth and characterisation

    Författare :Linda Höglund; Per-Olof Holz; Linköpings universitet; []
    Nyckelord :TECHNOLOGY; TEKNIKVETENSKAP;

    Sammanfattning : In this thesis, results are presented from the development of quantum dot (QD) based infrared photodetectors (IPs). This includes epitaxial growth of QDs, investigations of the structural, optical and electronic properties of the QD based material as well as characterisation of the resulting components. LÄS MER

  7. 5. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

    Författare :Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; Materials science; Teknisk materialvetenskap;

    Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER