Sökning: "implantation induced defects"

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden implantation induced defects.

  1. 1. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide

    Författare :Denny Åberg; KTH; []
    Nyckelord :capacitance spectrocopy; deep levels; deep level transient spectroscopy; thermal donors; thermal double donors; ultra shallow thermal donors; chemical kinetics; silicon carbide; ion implantation; implantation induced defects; implantation induced pas;

    Sammanfattning : .... LÄS MER

  3. 2. Spectroscopic studies of irradiation induced defects in SiC

    Författare :Fredrik Carlsson; Peter Deák; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Silicon carbide (SiC) with its applications has the potential to affect the everyday life of most citizens. As a material it has some outstanding properties concerning its mechanical and chemical toughness as well as its electrical properties for high power and high frequency applications. LÄS MER

  4. 3. Stability of point defects in silicon induced by high energy low dose ion implantation

    Författare :Lalita Josyula; KTH; []
    Nyckelord :;

    Sammanfattning : Ion implantation is a key' process for the introduction ofdopants in semiconductor technology. It involves bombarding thesubstrate material with energetic ions. LÄS MER

  5. 4. Applications of Ion Beam Methods in Silicide/Si and Silicide/GaAs Nanometre Structures

    Författare :Yanwen Zhang; Kärnfysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Phase formation; Nanometre structures; silicide; detection efficiency; Ion Beam Analysis; Ion Beam Synthesis; Time-of-Flight Energy Elastic Recoil Detection ToF-E ERD ; implantation; Fysicumarkivet A:1998:Zhang; Kärnfysik; Nuclear physics; Detla E-E ERD;

    Sammanfattning : Ion beam methods are used to analyse material (Ion Beam Analysis, IBA) and to modify the target (Ion Beam Modification of Materials, IBMM). In this thesis, ion beams have been used in various IBA techniques to investigate the surface nanometre structures, and also in an ion beam synthesis (IBS) technique to form thin films and to modify material properties. LÄS MER

  7. 5. Hydrogen diffusion and ion implantation in silicon carbide

    Författare :Martin Janson; KTH; []
    Nyckelord :heat abd tgernidtbanucs; electronics and electrical; materials science;

    Sammanfattning : Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived. LÄS MER