Sökning: "field-effect transistor"
Visar resultat 6 - 10 av 97 avhandlingar innehållade orden field-effect transistor.
6. Graphene field-effect transistors and devices for advanced high-frequency applications
Sammanfattning : New device technologies and materials are continuously investigated, in order to increase the bandwidth of high-speed electronics, thereby extending data rate and range of applications. The 2D-material graphene, with its intrinsically extremely high charge carrier velocity, is considered as a promising new channel material for advanced high frequency field-effect transistors. LÄS MER
7. Effects of impurities on charge transport in graphene field-effect transistors
Sammanfattning : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. LÄS MER
8. Photo-polymerization as a tool for engineering the active material in organic field-effect transistors
Sammanfattning : The emergence of organic semiconductors is exciting since it promises to open up for straightforward and low-cost fabrication of a wide range of efficient and novel electronic devices. However, in order for this promise to become reality it is critical that new and functional fabrication techniques are developed. LÄS MER
9. Analog Circuit Topology Development: Practice methods for technology and teaching based on comprehensible transistor models
Sammanfattning : To obtain adequate knowledge for design of robust analog circuits in industry, circuit engineers gain main knowledge from own practice experience, because theory taught by universities rarely states validity limits and result spreads. Therefore, when going from university to industry, the engineers find this theory nontrustworthy and relinquish it. LÄS MER
10. Vertical III-V Nanowire Transistors for Low-Power Electronics
Sammanfattning : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. LÄS MER