Sökning: "field-effect transistor"
Visar resultat 16 - 20 av 97 avhandlingar innehållade orden field-effect transistor.
16. Polyelectrolyte-Gated Organic Field Effect Transistors – Printing and Electrical Stability
Sammanfattning : The progress in materials science during recent decades along with the steadily growing desire to accomplish novel functionalities in electronic devices and the continuous strive to achieve a more efficient manufacturing process such as low‐cost robust high‐volume printing techniques, has brought the organic electronics field to light. For example, organic field effect transistors (OFETs) are the fundamental building blocks of flexible electronics. LÄS MER
17. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER
18. InAs Nanowire Devices and Circuits
Sammanfattning : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. LÄS MER
19. Vertical InAs Nanowire Devices and RF Circuits
Sammanfattning : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. LÄS MER
20. Modeling Carbon Nanotube Field Effect Transistors with Fixed and Suspended Nanotube Gates
Sammanfattning : Carbon nanotubes (CNT) exhibit a range of properties that make them well suited for nanoelectronic and nanoelectromechanical devices. One-dimensional field effect transistors based on single-walled CNTs have demonstrated excellent electrical characteristics and are competitive with silicon-based solutions, and oscillators based on suspended CNTs have been shown to work at gigahertz frequencies with Q-factors exceeding 10$^3$. LÄS MER
