Sökning: "field-effect transistor"

Visar resultat 1 - 5 av 97 avhandlingar innehållade orden field-effect transistor.

1. 1. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

   Författare :Niklas Rorsman; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; subharmonic; resistive mixer; Modulation Doped Field Effect Transistor MODFET ; heterostructure field effect transistor HFET ; monolithic microwave integrated circuits MMIC ; frequency multiplier; amplifier; III-V semiconductor; small signal model; electron beam lithography; High Electron Mobility Transistor HEMT ; large signal model; pseudomorphic;

   Sammanfattning : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. LÄS MER

3. 2. Electronic Sensors Based on Nanostructured Field-Effect Devices

   Författare :Si Chen; Shili Zhang; Jan Linnros; Christian Schönenberger; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; biosensor; field-effect transistor; nanowire; ISFET; Elektronik; Electronics;

   Sammanfattning : Point-of-care (POC) diagnostics presents a giant market opportunity with profound societal impact. In particular, specific detection of DNA and protein markers can be essential for early diagnosis of e.g. cancer, cardiovascular disease, infections or allergies. LÄS MER

4. 3. Vertical III-V Nanowire Tunnel Field-Effect Transistor

   Författare :Elvedin Memisevic; Nanoelektronik; []
   Nyckelord :Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

   Sammanfattning : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. LÄS MER

5. 4. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

   Författare :Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Sammanfattning : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. LÄS MER

7. 5. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

   Författare :Anders Mellberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

   Sammanfattning : .... LÄS MER