Sökning: "field-effect transistor"

Visar resultat 1 - 5 av 75 avhandlingar innehållade orden field-effect transistor.

  1. 1. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

    Detta är en avhandling från Chalmers University of Technology

    Författare :Niklas Rorsman; Chalmers tekniska högskola.; Chalmers University of Technology.; [1995]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; heterostructure field effect transistor HFET ; High Electron Mobility Transistor HEMT ; Modulation Doped Field Effect Transistor MODFET ; electron beam lithography; amplifier; resistive mixer; frequency multiplier; subharmonic; III-V semiconductor; pseudomorphic; monolithic microwave integrated circuits MMIC ; small signal model; large signal model;

    Sammanfattning : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. LÄS MER

  2. 2. Electronic Sensors Based on Nanostructured Field-Effect Devices

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Si Chen; Uppsala universitet.; [2013]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; biosensor; field-effect transistor; nanowire; ISFET; Elektronik; Electronics;

    Sammanfattning : Point-of-care (POC) diagnostics presents a giant market opportunity with profound societal impact. In particular, specific detection of DNA and protein markers can be essential for early diagnosis of e.g. cancer, cardiovascular disease, infections or allergies. LÄS MER

  3. 3. Vertical III-V Nanowire Tunnel Field-Effect Transistor

    Detta är en avhandling från The Department of Electrical and Information Technology

    Författare :Elvedin Memisevic; Lunds universitet.; Lund University.; [2017-08-21]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

    Sammanfattning : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. LÄS MER

  4. 4. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

    Detta är en avhandling från Chalmers University of Technology

    Författare :Anders Mellberg; Chalmers tekniska högskola.; Chalmers University of Technology.; [2002]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium phosphide; InP; high electron mobility transistor HEMT ; heterostructure field effect transistor HFET ; modulation doped field effect transistor MODFET ; monolithic microwave integrated circuit MMIC ; low noise amplifier; passive components; MIM capacitor; spiral inductor; thin film resistor TFR ; modeling; microstrip transmission line; TL; coplanar waveguides; CPW; III-V semiconductor; compound semiconductor; low noise amplifier; wideband LNA; 2DEG;

    Sammanfattning : .... LÄS MER

  5. 5. Effects of impurities on charge transport in graphene field-effect transistors

    Detta är en avhandling från Chalmers University of Technology

    Författare :Marlene Bonmann; Chalmers tekniska högskola.; Chalmers University of Technology.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carrier transport; graphene; field-effect transistors; saturation velocity; traps; electron and hole mobility; remote phonons; microwave devices; impurities;

    Sammanfattning : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. LÄS MER