Sökning: "drain bias"

Visar resultat 1 - 5 av 27 avhandlingar innehållade orden drain bias.

1. 1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

   Författare :Malin Borg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

   Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER

3. 2. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

   Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER

4. 3. Design and Characterization of RF-Power LDMOS Transistors

   Författare :Olof Bengtsson; Jörgen Olsson; Lars Vestling; Claes Beckman; Olof Tornblad; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power Amplifiers; LDMOS transistors; RF-power; IMD; Technology CAD; Load-Pull; Electronics; Elektronik;

   Sammanfattning : In mobile communication new applications like wireless internet and mobile video have increased the demand of data-rates. Therefore, new more wideband systems are being implemented. LÄS MER

5. 4. Polyelectrolyte-Gated Organic Field Effect Transistors – Printing and Electrical Stability

   Författare :Hiam Sinno; Magnus Berggren; Isak Engquist; Jan Linnros; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : The progress in materials science during recent decades along with the steadily growing desire to accomplish novel functionalities in electronic devices and the continuous strive to achieve a more efficient manufacturing process such as low‐cost robust high‐volume printing techniques, has brought the organic electronics field to light. For example, organic field effect transistors (OFETs) are the fundamental building blocks of flexible electronics. LÄS MER

7. 5. Integrated VCOs in Gallium Arsenide HEMT technologies with a novel varactor structure

   Författare :Mattias Ferndahl; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; design; Oscillator; HEMT; pHEMT; MMIC; VCO; varactor; GaAs; mHEMT;

   Sammanfattning : This thesis presents results on metamorphic and pseudomorpic GaAs HEMT based Voltage Controlled Oscillators and a novel high-Q varactor structure, used in the VCOs, together with a straightforward extraction procedure for the varactors.Theory and fundamentals around LC-oscillators with oscillator criteria, phase noise and different topologies are given as background together with VCO phase noise measurement methods and an overview on device flicker noise; its physical origin and measurement. LÄS MER