Sökning: "diamond diode"

Hittade 5 avhandlingar innehållade orden diamond diode.

1. 1. Charge Transport in Single-crystalline CVD Diamond

   Författare :Markus Gabrysch; Jan Isberg; Mats Leijon; Milos Nesladek; Uppsala universitet; []
   Nyckelord :CVD diamond; wide-bandgap semiconductor; single-crystalline diamond; carrier transport; time-of-flight; drift velocity; mobility; compensation; pair-creation; electronic devices; diamond detector; diamond diode;

   Sammanfattning : Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. LÄS MER

3. 2. Experimental Studies of Charge Transport in Single Crystal Diamond Devices

   Författare :Saman Majdi; Jan Isberg; Ricardo S. Sussmann; Uppsala universitet; []
   Nyckelord :Single crystal diamond; carrier transport; CVD diamond; time-of-flight; mobility; IR detector; compensation; diamond diode; drift velocity; thermal detector;

   Sammanfattning : Diamond is a promising material for high-power, high-frequency and high- temperature electronics applications, where its outstanding physical properties can be fully exploited. It exhibits an extremely high bandgap, very high carrier mobilities, high breakdown field strength, and the highest thermal conductivity of any wide bandgap material. LÄS MER

4. 3. Diamond Devices Based on Valley Polarization

   Författare :Nattakarn Suntornwipat; Jan Isberg; Markus Gabrysch; Saman Majdi; Hitoshi Umezawa; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CVD diamond; valleytronics; Negative Differential Mobility; NDM; electron polarization; Time-of-Flight; magnetotransport; carrier transport; drift velocity; valley-transistor; Transferred-Electron Oscillator; TEO; TED; Gunn diode;

   Sammanfattning : Diamond is a wide bandgap semiconductor with extreme properties such as high thermal conductivity, high breakdown field, high carrier mobilities and chemical inertness. These properties together with the possibility to synthesize high purity Single-Crystalline (SC) diamond by Chemical Vapor Deposition (CVD), make it a very interesting material and a candidate for use in power electronics and in hazardous environments. LÄS MER

5. 4. Absorbed Dose Determination and Characteristics of Degraded Electron Beams: Application to Intraoperative Radiation Therapy

   Författare :Peter Björk; Internmedicin - epidemiologi; []
   Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; Clinical physics; radiology; tomography; medical instrumentation; Klinisk fysiologi; radiologi; tomografi; medicinsk instrumentering; absorbed dose distribution; output factor; stopping-power ratio; beam characteristics; Monte Carlo calculation; electron beam dosimetry; applicator system; radiation therapy; linear accelerator; intraoperative radiotherapy;

   Sammanfattning : The aim of this work was to quantify limitations of and uncertainties in commonly used dosimetric techniques for relative absorbed dose determination in degraded electron beams, such as those encountered in intraoperative radiation therapy (IORT) and small-electron-field radiotherapy. Three different detector types were investigated with regard to measurements of output factors and relative absorbed dose distributions: (1) a parallel-plate ionization chamber, (2) a p-type silicon diode detector and (3) a diamond detector. LÄS MER

7. 5. Stacking Faults in Silicon Carbide

   Författare :Hisaomi Iwata; Friedhelm Bechstedt; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : This PhD thesis comprises a series of theoretical studies on various stacking faults in silicon carbide polytypes, based on first-principles density functional modelling, which lead to a detailed insight into general electronic properties of stacking disordered system. This work is largely motivated by the discovery in 1999 by ABB Corporate Research of the electronic degradation phenomenon in 4H-SiC p-i-n diodes. LÄS MER