Sökning: "deep-level transient spectroscopy"
Visar resultat 1 - 5 av 19 avhandlingar innehållade orden deep-level transient spectroscopy.
1. Growth and characterization of SiC and GaN
Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER
2. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide
Sammanfattning : .... LÄS MER
3. Optical Studies of InAs Quantum Dots in III-V Semiconductors
Sammanfattning : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. LÄS MER
4. The influence of process-induced defects on electrical properties of silicon junctions
Sammanfattning : .... LÄS MER
5. Detection and removal of traps at the SiO2/SiC interface
Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER