Sökning: "carrier capture cross section"

Hittade 4 avhandlingar innehållade orden carrier capture cross section.

  1. 1. Gallium nitride templates and its related materials for electronic and photonic devices

    Författare :Thomas Aggerstam; Sebastian Lourdudoss; Marc Ilegems; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; heteroepitaxy of GaN; BGaAlN; Fe doped GaN; HEMT; carrier capture cross section; intersubband transition modulator; Materials science; Teknisk materialvetenskap;

    Sammanfattning :  .... LÄS MER

  3. 2. Carrier Lifetime Relevant Deep Levels in SiC

    Författare :Ian Don Booker; Einar Sveinbjörnsson; Erik Janzén; Anthony Peaker; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon carbide; Deep level transient spectroscopy; Deep level; Carrier lifetime; Time-resolved photoluminescence;

    Sammanfattning : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. LÄS MER

  4. 3. Deep Levels in Electron-Irradiated and As-Grown SiC Power Device Material

    Författare :Carl Hemmingsson; Gerhard Pensl; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon Carbide (SiC) has several favorable physical properties for the fabrication of highpower, high-temperature and high-frequency devices. Devices in SiC can operate at high temperatures due to the wide band gap and the high thermal stability of the material. LÄS MER

  5. 4. Electronic properties of intrinsic defects and impurities in GaN

    Författare :Tran Thien Duc; Carl Hemmingsson; Galia Pozina; Erik Janzén; Walter Meyer; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. LÄS MER