Sökning: "buried oxide"

Visar resultat 1 - 5 av 20 avhandlingar innehållade orden buried oxide.

1. 1. The Buried Oxide of Silicon on Insulator Materials

   Författare :Per Ericsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxide defects; internal oxidation; aluminum oxide; wafer bonding; SOI; silicon on insulator; buried oxide;

   Sammanfattning : The buried oxide of silicon on insulator (SOI) wafers plays an important role in the operation of electronic devices made on such materials. The presence of defects in the buried oxide can seriously degrade the performance of a circuit. LÄS MER

3. 2. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

   Författare :Carlos Angulo Barrios; KTH; []
   Nyckelord :semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

   Sammanfattning : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. LÄS MER

4. 3. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

   Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

5. 4. Vacuum Ultraviolet Scanning Photoelectron Microscopy, Instrumentation & Applications

   Författare :Ulf Johansson; Lunds universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Photoelectron Microscopy; Spectromicroscopy; Photoemission; Silicon; Oxide desorption; High-Tc superconductor; Physics; Ellipsoidal mirror; Fysik; Chemistry; Kemi; Fysicumarkivet A:1997:Johansson;

   Sammanfattning : This thesis describes the design and characterisation of a vacuum ultraviolet scanning photoelectron microscope as well as results from studies of laterally inhomogeneous surfaces. The instrument utilises synchrotron radiation from an undulator at the 550 MeV storage ring at the MAX-laboratory. LÄS MER

7. 5. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

   Författare :Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

   Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER