Sökning: "SiC Schottky"
Visar resultat 1 - 5 av 34 avhandlingar innehållade orden SiC Schottky.
1. Development of SiC MESFET Based MMIC Technology
Sammanfattning : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. LÄS MER
2. Wide Bandgap MMIC Technology
Sammanfattning : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. LÄS MER
3. Growth and characterization of SiC and GaN
Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER
4. Fabrication and Characterization of 3C- and4H-SiC MOSFETs
Sammanfattning : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. LÄS MER
5. SiC Varactors for Dynamic Load Modulation of Microwave Power Amplifiers
Sammanfattning : The rapid consumer adoption of mobile services is leading to an exponential growth in wireless data traffic. In order to accommodate more concurrent high data-rate users, the required complexity of transmitting radio base station (RBS) power amplifiers (PAs) is increasing. LÄS MER