Sökning: "Si BJT"

Visar resultat 1 - 5 av 13 avhandlingar innehållade orden Si BJT.

1. 1. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

   Författare :Johan Pejnefors; KTH; []
   Nyckelord :chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

   Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER

3. 2. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER

4. 3. Low phase noise voltage controlled micro- and millimeter wave oscillators

   Författare :Stefan Andersson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; radio; anti series; microstrip resonator; silicon bipolar transistor; amplitude limiter; cavity resonator; varactor; transposed gain; MESFET; automatic gain control; VCO; delay line; laser; RF; oscillation criteria; millimetre wave; oscillator; mm-wave; noise; multiplier; fibre optic; SAW; DRO; PLL; surface acoustic wave; Si BJT; 1 f noise; FM noise; HEMT; clipping diode; HBT; YIG sphere; device; terfenol; gunn diode; stabilised; YIG film; quarts crystal; phase locked loop; magnetostrictive; resonator; phase error; whispering gallery mode; sapphire resonator; Fabry-Perot resonator; PHEMT; microwave; HFET; phase noise; DR; dielectric resonator; PM noise; balanced oscillator; piezo electric; AGC; frequency discriminator;

   Sammanfattning : .... LÄS MER

5. 4. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

   Författare :Martin Sandén; KTH; []
   Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

   Sammanfattning : .... LÄS MER

7. 5. On Reliability of SiC Power Devices in Power Electronics

   Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER