Sökning: "Schottky layer"
Visar resultat 1 - 5 av 37 avhandlingar innehållade orden Schottky layer.
1. Modelling of Terahertz Planar Schottky Diodes
Sammanfattning : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. LÄS MER
2. RF and Noise Optimization of Pseudomorphic inP HEMT Technology
Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. LÄS MER
3. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications
Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER
4. Schottky barriers and Schottky barrier based devices on Si and SiC
Sammanfattning : This work is devoted to a study of the formation andcharacterisation of Schottky Barriers on differentsemiconductors with an extension to the development of devicesbased on Schottky barriers. The major part of the work has beendone on 6H-SiC, but Si and SiGe alloys have also been used. LÄS MER
5. Low-frequency noise in high-k gate stacks with interfacial layer engineering
Sammanfattning : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. LÄS MER