Sökning: "Schottky diode"

Visar resultat 6 - 10 av 37 avhandlingar innehållade orden Schottky diode.

1. 6. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

   Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

3. 7. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

   Författare :Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
   Nyckelord :Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER

4. 8. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures

   Författare :Chun-Xia Du; Fransesco Priolo; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electroluminescence; diode; transistor; hot electron; recombination; excitation; de-excitation; Auger effect; molecular beam epitaxy; Er; Si; SiGe;

   Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER

5. 9. Subharmonic Sideband Separating Schottky Diode Mixer for Submillimetre Wave Applications

   Författare :Peter Sobis; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : .... LÄS MER

7. 10. Modelling and Characterisation of Terahertz Planar Schottky Diodes

   Författare :Aik-Yean Tang; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : This thesis deals with the modelling and characterisation of THz planar Schottky diodes, focusing on analyses of geometry-dependent electrical parasitics and the thermal management of the diode chip. Moving towards higher operating frequencies, the diode performance degrades due to high frequency losses, parasitic couplings and self-heating effects. LÄS MER