Sökning: "Schottky barrier MOSFET"
Visar resultat 1 - 5 av 7 avhandlingar innehållade orden Schottky barrier MOSFET.
1. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER
2. Integration of metallic source/drain contacts in MOSFET technology
Sammanfattning : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. LÄS MER
3. Fabrication, characterization, and modeling of metallic source/drain MOSFETs
Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER
4. Schottky Contacs on Silicon Nanowires
Sammanfattning : This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the end surfaces of silicon nanowires. It is shown, by measurements and analytical models, how the effective electron barrier is lowered by a positive charge introduced into an oxide embedding the wire. LÄS MER
5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER