Sökning: "SURFACE BARRIER DETECTORS"

Visar resultat 1 - 5 av 7 avhandlingar innehållade orden SURFACE BARRIER DETECTORS.

  1. 1. Surface coatings as xenon diffusion barriers on plastic scintillators : Improving Nuclear-Test-Ban Treaty verification

    Författare :Lisa Bläckberg; Mattias Klintenberg; Henrik Sjöstrand; Anders Ringbom; Stephan Pomp; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Plastic scintillator; Radioxenon; Diffusion barrier; Surface coating; Atomic Layer Deposition; Comprehensive Nuclear-Test-Ban Treaty; Fysik med inriktning mot tillämpad kärnfysik; Physics with specialization in Applied Nuclear Physics; Physics with spec. in Atomic; Molecular and Condensed Matter Physics; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik;

    Sammanfattning : This thesis investigates the ability of transparent surface coatings to reduce xenon diffusion into plastic scintillators. The motivation for the work is improved radioxenon monitoring equipment, used with in the framework of the verification regime of the Comprehensive Nuclear-Test-Ban Treaty. LÄS MER

  3. 2. Epitaxial growth of semiconductor nanowires

    Författare :Ann Persson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; materialteknik; nanowires; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

    Sammanfattning : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. LÄS MER

  4. 3. Application of SiGe(C) in high performance MOSFETs and infrared detectors

    Författare :Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. LÄS MER

  5. 4. Two-body Photodisintegration of ³He

    Författare :Martin Karlsson; Kärnfysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; differential cross sections; three-nucleon forces; MAX-lab; tagged photons; Nuclear physics; Kärnfysik; Fysicumarkivet A:000;

    Sammanfattning : In a series of experiments using the tagged photon facility at MAX-lab located in Lund, Sweden, the two-body photodisintegration of ³He has been investigated in the photon energy range 14--32 MeV. Differential cross sections of the reaction ³He(g,d) have been measured by detecting deuterons and protons in silicon surface barrier detectors. LÄS MER

  7. 5. GaN/AlN Multiple Quantum Well Structures

    Författare :Xinju Liu; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Sammanfattning : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. LÄS MER