Sökning: "Peter A. Lutz"

Hittade 3 avhandlingar innehållade orden Peter A. Lutz.

  1. 1. Tinkering Care Moves : Senior Home Care in Practice

    Författare :Peter A. Lutz; Mats Utas; Klaus Lindgaard Hoeyer; Uppsala universitet; []
    Nyckelord :SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; HUMANIORA; HUMANITIES; MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; HUMANIORA; HUMANITIES; care moves; tinkering; senior home care; Sweden; United States; Vårdvetenskap; Caring Sciences; Kulturantropologi; Cultural Anthropology; Etnologi; Ethnology; Health Care Research; Hälso- och sjukvårdsforskning; Human-Computer Interaction; Människa-dator interaktion; Medical Informatics; Medicinsk informatik;

    Sammanfattning : This dissertation builds on the current anthropological studies of care relations in practice. It draws inspiration from science and technology studies (STS) and postfeminist technoscience. A qualitative ethnographic approach grounds the empirical data collection and analysis. LÄS MER

  3. 2. Reflections on Ethnography as Film. A case study with Bosnians in a Swedish refugee camp

    Författare :Peter Lutz; Uppsala universitet; []
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  4. 3. On SiC JFET converters: components, gate-drives and main-circuit conditions

    Författare :Björn Ållebrand; Hans-Peter Nee; Lutz Josef; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power JFET; SiC JFET; Silicon Carbide; PSpice; Simulations; Gate drive; Blanking times; Normally-on; Modeling; Commutation transients; Electric power engineering; Elkraftteknik;

    Sammanfattning : This thesis deals with Silicon Carbide Junction Field Effect Transistors (SiC JFETs) - how to use them to their full potential in power electronic circuits, how to model them in a power electronic simulation program, and how a gate drive can be built. To fully utilize the low on-state losses of SiC JFETs it is suggested that SiC JFETs should not be equipped with anti-parallel diodes. LÄS MER