Sökning: "MOSFET switches"

Hittade 5 avhandlingar innehållade orden MOSFET switches.

  1. 1. MOSFET Modeling Aimed at Minimizing EMI in Switched DC/DC Converters Using Active Gate Control

    Författare :Andreas Henriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electromagnetic interference; Semiconductor device modeling; Adaptive control; MOSFET switches; Electromagnetic compatibility; State space methods; DC-DC power conversion; Power semiconductor diodes; Semiconductor device measurements;

    Sammanfattning : This thesis deals with electromagnetic interference that can arise from switched DC/DC-converters intended for low-power applications, e.g. within the telecom or automotiveindustry. LÄS MER

  3. 2. Symmetrical FET Modeling

    Författare :Ankur Prasad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; switch model; symmetrical model; nonlinear model; small-signal model; GaAs; Microwave FET; GaN;

    Sammanfattning : This thesis deals with empirical modeling of symmetrical Field-Effect Transistors (FETs). It covers three distinct topics within the areas of modeling and parameter extraction of microwave FETs.First, the symmetry of FET devices is addressed. Such devices are often used in transceivers as a building block for switches. LÄS MER

  4. 3. High Temperature Bipolar SiC Power Integrated Circuits

    Författare :Saleh Kargarrazi; Carl-Mikael Zetterling; Ana Rusu; Shankar Narayanan Ekkanath Madathil; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : In the recent decade, integrated electronics in wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme environments (e.g high-temperature and high radiation). Such electronics have applications in down-hole drilling, automobile-, air- and space- industries. LÄS MER

  5. 4. Characterization of dielectric layers for passivation of 4H-SiC devices

    Författare :Maciej Wolborski; Anders Hallén; Lothar Frey; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrophysics; Elektrofysik;

    Sammanfattning : Silicon carbide rectifiers and MESFET switches are commercially available since 2001 and 2005 respectively. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance, four inch wafers are available and the next step of technology is set to be the six inch substrate wafers. LÄS MER

  7. 5. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective

    Författare :Gautham Rangasamy; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-Power Electronics; Self-Heating; Steep Slope Devices; Tunnel Field-Effect Transistors; Vertical Nanowire; III-V Semiconductors;

    Sammanfattning : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. LÄS MER